SIHF15N60

SIHF15N60E-GE3 vs SIHF15N60E-E3

 
PartNumberSIHF15N60E-GE3SIHF15N60E-E3
DescriptionMOSFET 600V Vds 30V Vgs TO-220 FULLPAKMOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current15 A15 A
Rds On Drain Source Resistance280 mOhms280 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V
Vgs Gate Source Voltage30 V30 V
Qg Gate Charge39 nC39 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation34 W34 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeTube
SeriesEE
BrandVishay / SiliconixVishay / Siliconix
Fall Time22 ns22 ns
Product TypeMOSFETMOSFET
Rise Time26 ns26 ns
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time41 ns41 ns
Typical Turn On Delay Time16 ns16 ns
Unit Weight0.211644 oz0.211644 oz
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHF15N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF15N60E-E3 MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3
Vishay
Vishay
SIHF15N60E-E3 IGBT Transistors MOSFET 600V 280mOhm@10V 15A N-Ch E-SRS
SIHF15N60E-GE3 RF Bipolar Transistors MOSFET 600V 280mOhms@10V 15A N-Ch E-SRS
SIHF15N60E 全新原裝
SIHF15N60E,SIHF15N60E-EG 全新原裝
SIHF15N60E,SIHF15N60E-GE 全新原裝
SIHF15N60E,SIHFIB9N60A-E 全新原裝
SIHF15N60E-E3/GE3 全新原裝
SIHF15N60E-EG3 全新原裝
SIHF15N60EGE3 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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