 |  | | |
| PartNumber | SIHFR1N60A-GE3 | SIHFR1N60A | SIHFR1N60AGE3 |
| Description | MOSFET 600V Vds TO-252 DPAK | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 14 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 36 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SIHFR | - | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 0.88 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 9.8 ns | - | - |
| Unit Weight | 0.011993 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHFR1N60ATR-GE3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | |
| SIHFR1N60A-GE3 | MOSFET 600V Vds TO-252 DPAK | ||
| SIHFR1N60A | 全新原裝 | ||
| SIHFR1N60AGE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
Vishay |
SIHFR1N60A-GE3 | MOSFET N-CH 600V 1.4A TO252AA | |
| SIHFR1N60ATR-GE3 | MOSFET N-CH 600V 1.4A TO252AA |