PartNumber | SIHG20N50C-E3 | SIHG20N50E-GE3 | SIHG21N60EF-GE3 |
Description | MOSFET 500V Vds 30V Vgs TO-247AC | MOSFET 500V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Id Continuous Drain Current | 20 A | 19 A | - |
Rds On Drain Source Resistance | 270 mOhms | 184 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 4 V | - |
Vgs Gate Source Voltage | 10 V | 30 V | - |
Qg Gate Charge | 65 nC | 46 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 250 mW | 179 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Reel | Reel |
Height | 20.82 mm | 20.82 mm | 20.82 mm |
Length | 15.87 mm | 15.87 mm | 15.87 mm |
Transistor Type | 1 N-Channel | - | - |
Width | 5.31 mm | 5.31 mm | 5.31 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 6.4 S | - | - |
Fall Time | 44 ns | 25 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 27 ns | - |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 32 ns | 48 ns | - |
Typical Turn On Delay Time | 80 ns | 17 ns | - |
Unit Weight | 1.340411 oz | - | - |
Series | - | E | EF |