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| PartNumber | SIHG47N60E-GE3 | SIHG47N60E-E3 | SIHG47N60EF-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET RECOMMENDED ALT 78-SIHW47N60EF-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 47 A | 47 A | - |
| Rds On Drain Source Resistance | 64 mOhms | 64 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 148 nC | 148 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 357 W | 357 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Reel |
| Series | E | E | EF |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 82 ns | 82 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 72 ns | 72 ns | - |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 93 ns | 93 ns | - |
| Typical Turn On Delay Time | 28 ns | 28 ns | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
| Height | - | 20.82 mm | 20.82 mm |
| Length | - | 15.87 mm | 15.87 mm |
| Width | - | 5.31 mm | 5.31 mm |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG47N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | |
| SIHG47N60E-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N60EF-GE3 | MOSFET RECOMMENDED ALT 78-SIHW47N60EF-GE3 | ||
Vishay |
SIHG47N60E-E3 | IGBT Transistors MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS | |
| SIHG47N60EF-GE3 | IGBT Transistors MOSFET 600V 67mOhms@10V 47A N-Ch EF-SRS | ||
| SIHG47N60E-GE3 | MOSFET N-CH 600V 47A TO247AC | ||
| SIHG47N60E | 全新原裝 | ||
| SIHG47N60E-GE3 G47N60E | 全新原裝 | ||
| SIHG47N60E-GE3,SIHG47N60 | 全新原裝 | ||
| SIHG47N60EF | 全新原裝 | ||
| SIHG47N60EGE3 | Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |