 |  | | |
| PartNumber | SIJ482DP-T1-GE3 | SIJ482DP | SIJ482DPT1GE3 |
| Description | MOSFET 80V Vds 20V Vgs PowerPAK SO-8L | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
| Manufacturer | Vishay | Vishay / Siliconix | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 6.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 47 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69.4 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | ThunderFET TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIJ | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 68 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 36 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SIJ482DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Part Aliases | - | SIJ482DP-GE3 | - |
| Package Case | - | SO-8 | - |
| Pd Power Dissipation | - | 69.4 W | - |
| Vgs Gate Source Voltage | - | 2.7 V | - |
| Id Continuous Drain Current | - | 60 A | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.7 V | - |
| Rds On Drain Source Resistance | - | 6.2 mOhms | - |
| Qg Gate Charge | - | 24 nC | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIJ482DP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8L | |
| SIJ484DP-T1-GE3 | MOSFET | ||
| SIJ482DP | 全新原裝 | ||
| SIJ482DPT1GE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
Vishay |
SIJ482DP-T1-GE3 | MOSFET N-CH 80V 60A PPAK SO-8 | |
| SIJ484DP-T1-GE3 | MOSFET N-CH 30V 35A PPAK SO-8 |