SIR12

SIR120DP-T1-RE3 vs SIR122DP-T1-RE3 vs SIR12-21C/TR8

 
PartNumberSIR120DP-T1-RE3SIR122DP-T1-RE3SIR12-21C/TR8
DescriptionMOSFET N-Channel 80 V (D-S) MOSFETMOSFET 80V Vds 20V Vgs PowerPAK SO-8Infrared Emitters Infrared LED
ManufacturerVishayVishayEverlight
Product CategoryMOSFETMOSFETInfrared Emitters
RoHSEYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current106 A59.6 A-
Rds On Drain Source Resistance3.55 mOhms7.4 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge62.5 nC44 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation100 W65.7 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerPAKTrenchFET, PowerPAK-
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel TrenchFET Power MOSFET-
BrandVishay / SiliconixVishay / SiliconixEverlight
Forward Transconductance Min54 S65 S-
Fall Time8 ns6 ns-
Product TypeMOSFETMOSFETIR Emitters (IR LEDs)
Rise Time8 ns6 ns-
Factory Pack Quantity300030002000
SubcategoryMOSFETsMOSFETsInfrared Data Communications
Typical Turn Off Delay Time30 ns20 ns-
Typical Turn On Delay Time17 ns13 ns-
Series-SIR-
Illumination Color--Infrared
Moisture Sensitive--Yes
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR120DP-T1-RE3 MOSFET N-Channel 80 V (D-S) MOSFET
SIR122DP-T1-RE3 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
SIR124DP-T1-RE3 MOSFET 80V Vds; 20V Vgs PowerPAK SO-8
Everlight
Everlight
SIR12-21C/TR8 Infrared Emitters Infrared LED
SIR12-21C/TR8 Infrared Emitters Infrared LED
SIR12-21C-TR8 全新原裝
SIR12-21C/E/TR8 全新原裝
SIR125-680-PF 全新原裝
Vishay
Vishay
SIR122DP-T1-RE3 N-Channel 80-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 7.4 m @ 10V 7.4 m @ 7.5V m @ 4.5V
SIR124DP-T1-RE3 N-Channel 80-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 8.4 m @ 10V 10.3 m @ 7.5V m @ 4.5V
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