 |  | | |
| PartNumber | SIR172DP-T1-E3 | SIR172DP-T1-GE3 | SIR172DP-TGE3 |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 | ||
| Manufacturer | - | VISHAY | - |
| Product Category | - | FETs - Single | - |
| Series | - | SIRxxxDP | - |
| Packaging | - | Reel | - |
| Part Aliases | - | SIR172DP-GE3 | - |
| Unit Weight | - | 0.017870 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SO-8 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 29.8 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 13 ns | - |
| Rise Time | - | 19 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 20 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 8.9 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 19 ns | - |
| Typical Turn On Delay Time | - | 19 ns | - |
| Qg Gate Charge | - | 30 nC | - |
| Forward Transconductance Min | - | 49 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| SIR172DP-T1-E3 | 全新原裝 | ||
| SIR172DP-TGE3 | 全新原裝 | ||
Vishay |
SIR172DP-T1-GE3 | MOSFET N-CH 30V 20A PPAK SO-8 |