SIR872

SIR872ADP-T1-GE3 vs SIR872DP-T1-GE3 vs SIR872ADP-T1-RE3

 
PartNumberSIR872ADP-T1-GE3SIR872DP-T1-GE3SIR872ADP-T1-RE3
DescriptionMOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3MOSFET 150V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage150 V-150 V
Id Continuous Drain Current53.7 A-53.7 A
Rds On Drain Source Resistance18 mOhms-14.8 mOhms
Vgs th Gate Source Threshold Voltage2.5 V-2.5 V
Vgs Gate Source Voltage10 V-20 V
Qg Gate Charge31.3 nC-47 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation104 W-104 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReel-Reel
SeriesSIRSIRSIR
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min30 S-30 S
Fall Time7 ns-7 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time12 ns-12 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time15 ns-15 ns
Typical Turn On Delay Time10 ns-10 ns
Unit Weight0.017870 oz0.017870 oz0.017870 oz
Height-1.04 mm-
Length-6.15 mm-
Width-5.15 mm-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR872ADP-T1-GE3 MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
SIR872DP-T1-GE3 MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
SIR872ADP-T1-RE3 MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIR872DP-T1-GE3 RF Bipolar Transistors MOSFET 150V 18mOhm@10V 60A N-Ch
SIR872ADP-T1-GE3 MOSFET N-CH 150V 53.7A PPAK SO-8
SIR872ADP-T1-RE3 MOSFET N-CH 150V 53.7A SO-8
SIR872ADP 全新原裝
SIR872DP 全新原裝
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