 |  | | |
| PartNumber | SIR878ADP-T1-GE3 | SIR878ADP | SIR878ADP-T1 |
| Description | MOSFET RECOMMENDED ALT 78-SIR878BDP-T1-RE3 | ||
| Manufacturer | Vishay | - | Vishay |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 42 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 44.5 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | TrenchFET, PowerPAK | - | ThunderFET TrenchFET |
| Packaging | Reel | - | Reel |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | - | SIRxxxADP |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 44 S | - | - |
| Fall Time | 8 ns | - | 8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | 13 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | 25 ns |
| Typical Turn On Delay Time | 10 ns | - | 12 ns |
| Part # Aliases | SIR878ADP-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Part Aliases | - | - | SIR878ADP-GE3 |
| Package Case | - | - | SO-8 |
| Pd Power Dissipation | - | - | 44.5 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 40 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.8 V |
| Rds On Drain Source Resistance | - | - | 14 mOhms |
| Qg Gate Charge | - | - | 13.9 nC |
| Forward Transconductance Min | - | - | 44 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR878BDP-T1-RE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | |
| SIR878ADP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIR878BDP-T1-RE3 | ||
| SIR878DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIR878BDP-T1-RE3 | ||
| SIR878ADP-T1-GE3-CUT TAPE | 全新原裝 | ||
| SIR878ADP | 全新原裝 | ||
| SIR878ADP-T1 | 全新原裝 | ||
| SIR878ADPT1GE3 | 全新原裝 | ||
| SIR878DP | 全新原裝 | ||
| SIR878DP-T1-GS3 | 全新原裝 | ||
Vishay |
SIR878ADP-T1-GE3 | MOSFET N-CH 100V 40A PPAK SO-8 | |
| SIR878DP-T1-GE3 | MOSFET N-CH 100V 40A PPAK SO-8 | ||
| SIR878BDP-T1-RE3 | MOSFET N-CHAN 100V POWERPAK SO-8 |