 |  | | |
| PartNumber | SIS106DN-T1-GE3 | SIS1008PSM-4R7FT | SIS104RN-220R |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 16 A | - | - |
| Rds On Drain Source Resistance | 18.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 13.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 24 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Series | SIS | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIS106DN-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 | |
| SIS108DN-T1-GE3 | MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8 | ||
| SIS1008PSM-4R7FT | 全新原裝 | ||
| SIS104RN-220R | 全新原裝 | ||
| SIS108DN-T1-GE3 | MOSFET N-CH 80V PPAK 1212-8 | ||
Vishay |
SIS106DN-T1-GE3 | MOSFET N-CHAN 60V POWERPAK 1212- |