 |  | | |
| PartNumber | SISA10DN-T1-GE3 | SISA10DN-T1 | SISA10DN-T1-E3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | VHSHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | - | - |
| Qg Gate Charge | 51 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 39 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 52 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SISA10DN-GE3 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISA10DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | |
| SISA10DN-T1 | 全新原裝 | ||
| SISA10DN-T1-E3 | 全新原裝 | ||
Vishay |
SISA10DN-T1-GE3 | MOSFET N-CH 30V 30A 1212-8 |