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| PartNumber | SISS10DN-T1-GE3 | SISS12DN-T1-GE3 | SISS10ADN-T1-GE3 |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8S | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8S | MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | SIS | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Id Continuous Drain Current | - | 60 A | 31.7 A |
| Rds On Drain Source Resistance | - | 1.98 mOhms | 2.65 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | - | 20 V, - 16 V | 20 V, - 16 V |
| Qg Gate Charge | - | 89 nC | 61 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 65.7 W | 56.8 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Forward Transconductance Min | - | 151 S | 80 S |
| Fall Time | - | 10 ns | 5 ns |
| Rise Time | - | 27 ns | 5 ns |
| Typical Turn Off Delay Time | - | 28 ns | 30 ns |
| Typical Turn On Delay Time | - | 15 ns | 13 ns |
| Transistor Type | - | - | 1 N-Channel |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISS10DN-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8S | |
| SISS12DN-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8S | ||
| SISS10ADN-T1-GE3 | MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8S | ||
Vishay |
SISS10ADN-T1-GE3 | MOSFET N-CHAN 40 V POWERPAK 1212 | |
| SISS12DN-T1-GE3 | MOSFET N-CHAN 40V POWERPAK 1212- | ||
| SISS10DN-T1-GE3 | MOSFET N-CH 40V 60A PPAK 1212-8S | ||
| SISS10DN | 全新原裝 | ||
| SISS10DNT1GE3 | Power Field-Effect Transisto |