 | |  | |
| PartNumber | SISS42LDN-T1-GE3 | SiSS42DN-T1-GE3 | SISS40DN-T1-GE3 |
| Description | MOSFET Nch 100V Vds 20V Vgs PowerPAK 1212-8S | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK1212-8 | PowerPAK-1212-8S-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 39 A | 40.5 A | - |
| Rds On Drain Source Resistance | 14.9 mOhms | 14.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 48 nC | 24.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 57 W | 57 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | - | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIS | - | SIS |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 70 S | 46 S | - |
| Fall Time | 5 ns | 6 ns, 7 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 6 ns, 7 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 19 ns, 21 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns, 15 ns | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISS42LDN-T1-GE3 | MOSFET Nch 100V Vds 20V Vgs PowerPAK 1212-8S | |
| SiSS42DN-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S | ||
| SISS40DN-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S | ||
| SISS46DN-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S | ||
Vishay |
SISS40DN-T1-GE3 | RF Bipolar Transistors MOSFET 100V .0210ohm@10V 36.5A N-Ch T-FET | |
| SISS42DN-T1-GE3 | MOSFET N-CHAN 100V POWERPAK 1212 | ||
| SISS46DN-T1-GE3 | N-Channel 100-V (D-S) MOSFET PowerPAK 1212-8S 250M SG 2 mil , 12.8 m @ 10V 11.2 m @ 7.5V m @ 4.5V | ||
| SISS40DN | 全新原裝 |