 |  | |
| PartNumber | SIZF906DT-T1-GE3 | SIZF906ADT-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAIR-6x5-8 | PowerPAIR-6x5F-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 60 A | 60 A |
| Rds On Drain Source Resistance | 3 mOhms, 900 uOhms | 3.8 mOhms, 1.17 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | - 16 V, 20 V | 10 V |
| Qg Gate Charge | 49 nC, 200 nC | 24.5 nC, 100 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 38 W, 83 W | 38 W, 83 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET, SkyFET, PowerPAIR |
| Packaging | Reel | Reel |
| Series | SIZ | SIZ |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Brand | Vishay / Siliconix | Vishay Semiconductors |
| Forward Transconductance Min | 130 S, 130 S | 130 S, 130 S |
| Fall Time | 40 ns, 30 ns | 40 ns, 30 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 80 ns, 60 ns | 80 ns, 60 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns, 65 ns | 20 ns, 65 ns |
| Typical Turn On Delay Time | 20 ns, 45 ns | 20 ns, 45 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIZF906DT-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 | |
Vishay Semiconductors |
SIZF906ADT-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F | |
Vishay |
SIZF906ADT-T1-GE3 | MOSFET DUAL N-CHAN 30V | |
| SIZF906DT-T1-GE3 | MOSFET 2 N-CH 30V 60A POWERPAIR | ||
| SIZF906DT | 全新原裝 |