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| PartNumber | SMMBTA56LT1G | SMMBTA56LT3G |
| Description | Bipolar Transistors - BJT SS DR XSTR SPCL TR | Bipolar Transistors - BJT SS DR XSTR SPCL TR |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | - 80 V | - 80 V |
| Collector Base Voltage VCBO | - 80 V | - 80 V |
| Emitter Base Voltage VEBO | - 4 V | - 4 V |
| Collector Emitter Saturation Voltage | - 0.25 V | - 0.25 V |
| Maximum DC Collector Current | - 500 mA | - 500 mA |
| Gain Bandwidth Product fT | 50 MHz | 50 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | MMBTA56L | MMBTA56L |
| Packaging | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | - 500 mA | - 500 mA |
| DC Collector/Base Gain hfe Min | 100 | 100 |
| Pd Power Dissipation | 300 mW | 300 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
SMMBTA56LT1G | Bipolar Transistors - BJT SS DR XSTR SPCL TR | |
| SMMBTA56LT3G | Bipolar Transistors - BJT SS DR XSTR SPCL TR | ||
| SMMBTA56LT3G | Bipolar Transistors - BJT SS DR XSTR SPCL TR | ||
| SMMBTA56LT1G | Bipolar Transistors - BJT SS DR XSTR SPCL TR | ||
| SMMBTA56LT1 | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | ||
| SMMBTA56LT3 | 全新原裝 | ||
| SMMBTA56LT1G-CUT TAPE | 全新原裝 |