| PartNumber | SP000925524 | SP000928260 | SP000928262 |
| Description | IGBT Transistors IGBT PRODUCTS | MOSFET N-Ch 650V 6A DPAK-2 | MOSFET N-Ch 650V 8.7A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-252-3 | TO-252-3 |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Series | HighSpeed 3 | CoolMOS CFDA | CoolMOS CFDA |
| Packaging | Tube | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | IGBT Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 240 | 2500 | 2500 |
| Subcategory | IGBTs | MOSFETs | MOSFETs |
| Tradename | TRENCHSTOP | CoolMOS | CoolMOS |
| Part # Aliases | IGW60N60H3 IGW60N60H3FKSA1 SP000925524 | IPD65R660CFDA IPD65R660CFDAATMA1 SP000928260 | IPD65R420CFDA IPD65R420CFDAATMA1 SP000928262 |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 650 V | 650 V |
| Id Continuous Drain Current | - | 6 A | 8.7 A |
| Rds On Drain Source Resistance | - | 594 mOhms | 420 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 3.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 20 nC | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 62.5 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 2.3 mm | 2.3 mm |
| Length | - | 6.5 mm | 6.5 mm |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 6.22 mm | 6.22 mm |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 8 ns | - |
| Typical Turn Off Delay Time | - | 40 ns | - |
| Typical Turn On Delay Time | - | 9 ns | - |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |