 | | | |
| PartNumber | SPB04N60C3 | SPB04N60C2 | SPB04N60C3 04N60C3 |
| Description | Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3 | ||
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SP000013533 SPB04N60C3ATMA1 SPB04N60C3XT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 9.5 ns | - | - |
| Rise Time | 2.5 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Rds On Drain Source Resistance | 950 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 58.5 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Channel Mode | Enhancement | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPB04N60C3ATMA1 | MOSFET LOW POWER_LEGACY | |
| SPB04N60S5ATMA1 | MOSFET LOW POWER_LEGACY | ||
| SPB04N60C3 | Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3 | ||
| SPB04N60S5 | MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS S5 | ||
| SPB04N60C2 | 全新原裝 | ||
| SPB04N60C3 04N60C3 | 全新原裝 | ||
| SPB04N60C3E3045A | Trans MOSFET N-CH 650V 4.5A 3-Pin TO-263 T/R - Bulk (Alt: SPB04N60C3E3045A) | ||
Infineon Technologies |
SPB04N60C3ATMA1 | MOSFET N-CH 650V 4.5A D2PAK | |
| SPB04N60S5ATMA1 | MOSFET N-CH 600V 4.5A TO-263 |