 |  | | |
| PartNumber | SPB11N60S5ATMA1 | SPB11N60S5 | SPB11N60S5E3045 |
| Description | MOSFET N-CH 600V 11A TO-263 | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5 | |
| Manufacturer | - | INF | - |
| Product Category | - | FETs - Single | - |
| Series | - | CoolMOS S5 | - |
| Packaging | - | Reel | - |
| Part Aliases | - | SP000012373 SPB11N60S5ATMA1 SPB11N60S5XT | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | CoolMOS | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 125 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 20 ns | - |
| Rise Time | - | 35 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 11 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 380 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 150 ns | - |
| Typical Turn On Delay Time | - | 130 ns | - |
| Channel Mode | - | Enhancement | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPB11N60S5ATMA1 | MOSFET N-CH 600V 11A TO-263 | |
| SPB11N60S5 | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5 | ||
| SPB11N60S5E3045 | 全新原裝 |