 | |  | |
| PartNumber | SPD30N03S2L-10 | SPD30N03S2L-07 | SPD30N03S2L-10 G |
| Description | MOSFET N-Ch 30V 30A DPAK-2 | MOSFET N-Ch 30V 30A DPAK-2 | RF Bipolar Transistors MOSFET N-Ch 30V 30A DPAK-2 |
| Manufacturer | Infineon | Infineon | 10INFINE0N |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 10.4 mOhms | 6.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 100 W | 136 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 47.5 S / 23.8 S | 58 S / 29 S | - |
| Fall Time | 17 ns | 47 ns | 17 ns |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | 17 ns | 13 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | 62 ns | 27 ns |
| Typical Turn On Delay Time | 6.1 ns | 8 ns | 6.1 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Series | - | - | SPD30N03 |
| Part Aliases | - | - | SP000443918 SPD30N03S2L10GBTMA1 SPD30N03S2L10GXT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 100 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 30 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 10 mOhms |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD30N03S2L10GBTMA1 | MOSFET N-Ch 30V 30A DPAK-2 | |
| SPD30N03S2L-10 | MOSFET N-Ch 30V 30A DPAK-2 | ||
| SPD30N03S2L-07 | MOSFET N-Ch 30V 30A DPAK-2 | ||
| SPD30N03S2L-10 G | RF Bipolar Transistors MOSFET N-Ch 30V 30A DPAK-2 | ||
| SPD30N03S2L10G | 全新原裝 | ||
| SPD30N03S2L | 全新原裝 | ||
| SPD30N03S2L-07G | 全新原裝 | ||
| SPD30N03S2L-08 | 全新原裝 | ||
| SPD30N03S2L-10G | 全新原裝 | ||
| SPD30N03S2L-20 2N03L20 | 全新原裝 | ||
| SPD30N03S2L-20 G | MOSFET N-Ch 30V 30A DPAK-2 | ||
| SPD30N03S2L08 | 全新原裝 | ||
| SPD30N03S2L1C | 全新原裝 | ||
Infineon Technologies |
SPD30N03S2L-07 | MOSFET N-CH 30V 30A DPAK | |
| SPD30N03S2L-10 | MOSFET N-CH 30V 30A DPAK | ||
| SPD30N03S2L-20 | MOSFET N-CH 30V 30A DPAK | ||
| SPD30N03S2L07GBTMA1 | MOSFET N-CH 30V 30A TO252-3 | ||
| SPD30N03S2L07T | MOSFET N-CH 30V 30A DPAK | ||
| SPD30N03S2L10GBTMA1 | MOSFET N-CH 30V 30A TO252-3 | ||
| SPD30N03S2L20GBTMA1 | MOSFET N-CH 30V 30A TO252-3 | ||
| SPD30N03S2L-07 G | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: SPD30N03S2L-07 G) | ||
| SPD30N03S2L-20G | Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |