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| PartNumber | SPD50P03L G | SPD50P03LGBTMA1 | SPD50P03LGXT |
| Description | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 50 A | 50 A | 50 A |
| Rds On Drain Source Resistance | 5.7 mOhms | 5.7 mOhms | 5.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | - 126 nC | - 126 nC | - 126 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 150 W | 150 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | OptiMOS P | XPD50P03 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 47 S | 47 S | 47 S |
| Fall Time | 104 ns | 104 ns | 104 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 21.7 ns | 21.7 ns | 21.7 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 139 ns | 139 ns | 139 ns |
| Typical Turn On Delay Time | 14.8 ns | 14.8 ns | 14.8 ns |
| Part # Aliases | SP000371908 SPD50P03LGBTMA1 SPD5P3LGXT | G SP000371908 SPD50P03L SPD5P3LGXT | G SP000371908 SPD50P03L SPD50P03LGBTMA1 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD50P03L G | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | |
| SPD50P03LGBTMA1 | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | ||
| SPD50P03LGXT | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | ||
| SPD50P03L G | Trans MOSFET P-CH 30V 50A Automotive 5-Pin(4+Tab) TO-252 | ||
| SPD50P03LGBTMA1 | MOSFET P-CH 30V 50A TO-252 | ||
| SPD50P03LGXT | MOSFET P-CH 30V 50A TO-252 | ||
| SPD50P03 | 全新原裝 | ||
| SPD50P03 50P03L | 全新原裝 | ||
| SPD50P03LG | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 30V, 0.007OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | ||
| SPD50P03LGINCT-ND | 全新原裝 | ||
| SPD50P03LGINDKR-ND | 全新原裝 | ||
| SPD50P03LGINTR-ND | 全新原裝 | ||
| SPD50P03LGS | 全新原裝 | ||
| SPD50P03LT | 全新原裝 | ||
| SPD50P03L | Power Field-Effect Transistor, 50A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |