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| PartNumber | SQ1539EH-T1_GE3 | SQ1539EH-T1-GE3 | SQ154 MSOP-10 SQ POWER M |
| Description | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | N/P CHANNEL 30V 175C MOSFET | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 850 mA | - | - |
| Rds On Drain Source Resistance | 210 mOhms, 788 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 2.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 1.4 nC, 1.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 2.1 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1.2 S, 0.6 S | - | - |
| Fall Time | 32 ns, 17 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns, 39 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8 ns, 10 ns | - | - |
| Typical Turn On Delay Time | 3 ns, 4 ns | - | - |
| Unit Weight | 0.000265 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ1539EH-T1_GE3 | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | |
| SQ1563AEH-T1_GE3 | MOSFET N Ch 20Vds 8Vgs AEC-Q101 Qualified | ||
| SQ1539EH-T1-GE3 | N/P CHANNEL 30V 175C MOSFET | ||
| SQ154 MSOP-10 SQ POWER M | 全新原裝 | ||
| SQ1563AEH-T1-GE3 | 全新原裝 |