 | |  | |
| PartNumber | SQ2337ES-T1_GE3 | SQ2337ES-T1-GE3 | SQ2337ES |
| Description | MOSFET P-Channel 80V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ2337ES-T1_GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 2.2 A | - | - |
| Rds On Drain Source Resistance | 290 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 11.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 3.5 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Unit Weight | 0.000282 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2337ES-T1_GE3 | MOSFET P-Channel 80V AEC-Q101 Qualified | |
| SQ2337ES-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ2337ES-T1_GE3 | ||
| SQ2337ES-T1-GE3 | IGBT Transistors MOSFET P-Channel 80V Automotive MOSFET | ||
| SQ2337ES | 全新原裝 | ||
Vishay |
SQ2337ES-T1_GE3 | MOSFET P-CHAN 80V SOT23 |