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| PartNumber | SQ2351ES-T1_GE3 | SQ2351ES-T1-GE3 | SQ2351ES-T1-GE3 (VISHAY) |
| Description | MOSFET P-Channel 20V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ2351ES-T1_GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-236-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.2 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 5.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 6 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Unit Weight | 0.000423 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2351ES-T1_GE3 | MOSFET P-Channel 20V AEC-Q101 Qualified | |
| SQ2351ES-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ2351ES-T1_GE3 | ||
| SQ2351ES-T1-GE3 | IGBT Transistors MOSFET P-Channel 20V Automotive MOSFET | ||
| SQ2351ES-T1_GE3-CUT TAPE | 全新原裝 | ||
| SQ2351ES-T1-GE3 (VISHAY) | 全新原裝 | ||
Vishay |
SQ2351ES-T1_GE3 | MOSFET P-CHAN 20V SOT23 |