SQ4483

SQ4483EY-T1_GE3 vs SQ4483BEEY-T1_GE3 vs SQ4483BEEY-T1-GE3

 
PartNumberSQ4483EY-T1_GE3SQ4483BEEY-T1_GE3SQ4483BEEY-T1-GE3
DescriptionMOSFET P Ch -30Vds 20Vgs AEC-Q101 QualifiedMOSFET P-Channel 30V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ4483BEEY-T1_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current30 A22 A-
Rds On Drain Source Resistance7 mOhms7 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge113 nC113 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation7 W7 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height1.75 mm--
Length4.9 mm--
SeriesSQSQSQ
Transistor Type1 P-Channel1 P-Channel-
Width3.9 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min32 S32 S-
Fall Time20 ns178 us-
Product TypeMOSFETMOSFETMOSFET
Rise Time146 ns82 us-
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time57 ns134 us-
Typical Turn On Delay Time20 ns38 us-
Unit Weight0.002610 oz0.002610 oz-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ4483EY-T1_GE3 MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
SQ4483BEEY-T1_GE3 MOSFET P-Channel 30V AEC-Q101 Qualified
SQ4483BEEY-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ4483BEEY-T1_GE3
SQ4483BEEY-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ4483BEEY-T1_GE3
SQ4483BEEY-T1-E3 全新原裝
SQ4483EEY 全新原裝
SQ4483EEY-T1-E3 全新原裝
SQ4483EEY-T1-GE3 全新原裝
Vishay
Vishay
SQ4483EY-T1_GE3 MOSFET P-CHANNEL 30V 30A 8SOIC
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