SQD100N04-3m6L

SQD100N04-3m6L_GE3 vs SQD100N04-3M6L-GE3 vs SQD100N04-3M6L

 
PartNumberSQD100N04-3m6L_GE3SQD100N04-3M6L-GE3SQD100N04-3M6L
DescriptionMOSFET N-Channel 40V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge130 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min105 S--
Fall Time11 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.011993 oz0.011993 oz-
Height-2.38 mm-
Length-6.73 mm-
Width-6.22 mm-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD100N04-3m6L_GE3 MOSFET N-Channel 40V AEC-Q101 Qualified
SQD100N04-3M6L-GE3 MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE
SQD100N04-3M6L-GE3 IGBT Transistors MOSFET N-Channel 40V Automotive MOSFET
SQD100N04-3M6L 全新原裝
Vishay
Vishay
SQD100N04-3M6L_GE3 MOSFET N-CH 40V 100A TO252AA
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