 | | | |
| PartNumber | SQD15N06-42 | SQD15N06-42L | SQD15N06-42L-GE3 |
| Description | N-CHANNEL 60V DPAK | ||
| Manufacturer | - | - | |
| Product Category | - | - | FETs - Single |
| Series | - | - | SQ Series |
| Packaging | - | - | Reel |
| Unit Weight | - | - | 0.050717 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | TrenchFET |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 2 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 8 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 15 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 42 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 15 ns |
| Typical Turn On Delay Time | - | - | 7 ns |
| Qg Gate Charge | - | - | 9.5 nC |
| Channel Mode | - | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD15N06-42L_GE3 | MOSFET 60V 15A 37W AEC-Q101 Qualified | |
| SQD15N06-42L_GE3-CUT TAPE | 全新原裝 | ||
| SQD15N06-42 | 全新原裝 | ||
| SQD15N06-42L | 全新原裝 | ||
| SQD15N06-42L-GE3 | N-CHANNEL 60V DPAK | ||
| SQD15N06-42L-T4GE3 | 全新原裝 | ||
Vishay |
SQD15N06-42L_GE3 | MOSFET N-CH 60V 15A |