 | |  | |
| PartNumber | SQD19P06-60L_GE3 | SQD19P06-60L-GE3 | SQD19P06-60L-GE3 (PCN |
| Description | MOSFET 60V 20A 46W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQD19P06-60L_GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 55 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 46 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD19P06-60L_GE3 | MOSFET 60V 20A 46W AEC-Q101 Qualified | |
| SQD19P06-60L-GE3 | MOSFET RECOMMENDED ALT 78-SQD19P06-60L_GE3 | ||
| SQD19P06-60L-GE3 | P-CHANNEL 60-V (D-S), 175C MOS | ||
| SQD19P06-60L-GE3 (PCN | 全新原裝 | ||
Vishay |
SQD19P06-60L_GE3 | MOSFET P-CH 60V 20A TO252 |