SQD30N

SQD30N05-20L_GE3 vs SQD30N05-20L-GE3 vs SQD30N05-20L

 
PartNumberSQD30N05-20L_GE3SQD30N05-20L-GE3SQD30N05-20L
DescriptionMOSFET N-Channel 55V AEC-Q101 QualifiedRF Bipolar Transistors MOSFET N-Channel 55V Automotive MOSFET
ManufacturerVishayVIS-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance16 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ Series-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min34 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.011993 oz0.050717 oz-
Package Case-TO-252-3-
Vds Drain Source Breakdown Voltage-55 V-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD30N05-20L_GE3 MOSFET N-Channel 55V AEC-Q101 Qualified
SQD30N05-20L_T4GE3 MOSFET 55V Vds 20V Vgs TO-252
SQD30N05-20L-GE3 RF Bipolar Transistors MOSFET N-Channel 55V Automotive MOSFET
SQD30N05-20L 全新原裝
Vishay
Vishay
SQD30N05-20L_GE3 MOSFET N-CH 55V 30A TO252
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