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| PartNumber | SQD50P08-25L_GE3 | SQD50P08-28-GE3 | SQD50P08-25L-GE3 |
| Description | MOSFET 80V 50A 136W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQD50P08-28_GE3 | MOSFET RECOMMENDED ALT 78-SQD50P08-25L_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 25 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 91 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 2.38 mm | 2.38 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 71 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | - | 0.011993 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD50P08-25L_GE3 | MOSFET 80V 50A 136W AEC-Q101 Qualified | |
| SQD50P08-28_GE3 | MOSFET P-Channel 80V AEC-Q101 Qualified | ||
| SQD50P08-28-T4_GE3 | MOSFET -80V Vds 20V Vgs TO-252 | ||
| SQD50P08-28-GE3 | MOSFET RECOMMENDED ALT 78-SQD50P08-28_GE3 | ||
| SQD50P08-25L-GE3 | MOSFET RECOMMENDED ALT 78-SQD50P08-25L_GE3 | ||
| SQD50P08-25L-GE3 | RF Bipolar Transistors MOSFET 80V 50A 136W P-Ch Automotive | ||
| SQD50P08-25L | 全新原裝 | ||
| SQD50P08-28 | 全新原裝 | ||
| SQD50P0828GE3 | Power Field-Effect Transistor, 48A I(D), 80V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
Vishay |
SQD50P08-25L_GE3 | MOSFET P-CHAN 80V TO252 | |
| SQD50P08-28_GE3 | MOSFET P-CH 80V 48A TO252AA |