SQJ43

SQJ431EP-T1_GE3 vs SQJ431AEP-T1_GE3 vs SQJ431EP-T1-GE3

 
PartNumberSQJ431EP-T1_GE3SQJ431AEP-T1_GE3SQJ431EP-T1-GE3
DescriptionMOSFET -200v -12A 83W AEC-Q101 QualifiedMOSFET -200V Vds 20V Vgs PowerPAK SO-8LMOSFET RECOMMENDED ALT 781-SQJ431EP-T1_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8L-4PowerPAK-SO-8L-4PowerPAK-SO-8L-4
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current12 A9.4 A-
Rds On Drain Source Resistance213 mOhms305 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2. 5 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge71 nC55 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation83 W68 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101-AEC-Q101
TradenameTrenchFETPowerPAKTrenchFET
PackagingReelReelReel
Height1.04 mm-1.04 mm
Length6.15 mm-6.15 mm
SeriesSQ-SQ
Transistor Type1 P-Channel1 N-Channel-
Width5.13 mm-5.13 mm
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min16 S15 S-
Fall Time10 ns5 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns5 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time44 ns35 ns-
Typical Turn On Delay Time15 ns16 ns-
Unit Weight0.017870 oz0.008466 oz0.017870 oz
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ431EP-T1_GE3 MOSFET -200v -12A 83W AEC-Q101 Qualified
SQJ433EP-T1_GE3 MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
SQJ431AEP-T1_GE3 MOSFET -200V Vds 20V Vgs PowerPAK SO-8L
SQJ431EP-T1-GE3 MOSFET RECOMMENDED ALT 781-SQJ431EP-T1_GE3
Vishay
Vishay
SQJ431EP-T2_GE3 MOSFET RECOMMENDED ALT 78-SQJ431AEP-T1_GE3
SQJ433EP-T1_GE3 MOSFET P-CH 30V 75A POWERPAKSO-8
SQJ431EP-T1_GE3 MOSFET P-CHAN 200V SO8L
SQJ431EP-T1-GE3 IGBT Transistors MOSFET -200v -12A 83W TrenchFET
SQJ431EPT1-GE3 全新原裝
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