| PartNumber | SQJ476EP-T1_GE3 | SQJ474EP-T1_GE3 | SQJ474EP-T2_GE3 |
| Description | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 23 A | 26 A | 26 A |
| Rds On Drain Source Resistance | 30 mOhms | 22 mOhms | 30 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 20 nC | 30 nC | 30 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 45 W | 45 W | 45 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 6.15 mm | 6.15 mm | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.13 mm | 5.13 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 22 S | 28 S | 28 S |
| Fall Time | 50 ns | 40 ns | 40 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 18 ns | 18 ns |
| Typical Turn On Delay Time | 5 ns | 5 ns | 5 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |