 |  | | |
| PartNumber | SQJ858AEP-T1-GE3 | SQJ858AEP | SQJ858AEP-T1-G |
| Description | MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3 | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | TrenchFETR | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SQJ848AEP-T1-GE3 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Package Case | - | PowerPAKR SO-8 | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR SO-8 | - |
| Configuration | - | Single | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 48W | - |
| Drain to Source Voltage Vdss | - | 40V | - |
| Input Capacitance Ciss Vds | - | 2450pF @ 20V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 58A (Tc) | - |
| Rds On Max Id Vgs | - | 6.3 mOhm @ 14A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 55nC @ 10V | - |
| Pd Power Dissipation | - | 48 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 9 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 58 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 6.3 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 26 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Qg Gate Charge | - | 36 nC | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ858AEP-T1_GE3 | MOSFET 40V 58A 48W AEC-Q101 Qualified | |
| SQJ858AEP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3 | ||
| SQJ858AEP | 全新原裝 | ||
| SQJ858AEP-T1-G | 全新原裝 | ||
| SQJ858AEP-T1-GE3 | N-CHANNEL 40-V (D-S) 175C MOSF | ||
Vishay |
SQJ858AEP-T1_GE3 | MOSFET N-CH 40V 58A |