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| PartNumber | SQJ868EP-T1_GE3 | SQJ860EP-T1_GE3 |
| Description | MOSFET Dual N-Ch 40V AEC-Q101 Qualified | MOSFET 40V Vds 60A Id AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V |
| Id Continuous Drain Current | 58 A | 60 A |
| Rds On Drain Source Resistance | 6.2 mOhms | 5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 55 nC | 55 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 48 W | 48 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Series | SQJ868EP | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 85 S | 78 S |
| Fall Time | 8 ns | 5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | 5 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 30 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns |
| Tradename | - | TrenchFET |
| Height | - | 1.04 mm |
| Length | - | 6.15 mm |
| Width | - | 5.13 mm |
| Unit Weight | - | 0.017870 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ868EP-T1_GE3 | MOSFET Dual N-Ch 40V AEC-Q101 Qualified | |
| SQJ860EP-T1_GE3 | MOSFET 40V Vds 60A Id AEC-Q101 Qualified | ||
Vishay |
SQJ860EP-T1_GE3 | MOSFET N-CH 40V 60A POWERPAKSO-8 | |
| SQJ868EP-T1_GE3 | MOSFET N-CH 40V 58A POWERPAKSOL | ||
| SQJ868EP | 全新原裝 |