SQJ912A

SQJ912AEP-T1_GE3 vs SQJ912AEP-T1-GE3 vs SQJ912AEP-T1

 
PartNumberSQJ912AEP-T1_GE3SQJ912AEP-T1-GE3SQJ912AEP-T1
DescriptionMOSFET 40V 30A 48W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4PowerPAK-SO-8L-4-
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance7.7 mOhms, 7.7 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge38 nC, 38 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation48 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSQSQ-
Transistor Type2 N-Channel--
Width5.13 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min58 S, 58 S--
Fall Time11 ns, 11 ns--
Product TypeMOSFETMOSFET-
Rise Time9 ns, 9 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns, 23 ns--
Typical Turn On Delay Time10 ns, 10 ns--
Unit Weight0.017870 oz0.017870 oz-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ912AEP-T1_GE3 MOSFET 40V 30A 48W AEC-Q101 Qualified
SQJ912AEP-T1-GE3 MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
SQJ912AEP-T1 全新原裝
SQJ912AEP-T1-GE3 DUAL N-CHANNEL 40-V (D-S) 175C
Vishay
Vishay
SQJ912AEP-T1_GE3 MOSFET 2N-CH 40V 30A PPAK SO-8
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