 | |  | |
| PartNumber | SQJA64EP-T1_GE3 | SQJA60EP-T1_GE3 | SQJA62EP-T1_GE3 |
| Description | MOSFET N-Ch 60V Vds AEC-Q101 Qualified | MOSFET 60V Vds PowerPAK AEC-Q101 Qualified | MOSFET N-CH 60V 60A POWERPAKSO-8 |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 15 A | 30 A | - |
| Rds On Drain Source Resistance | 25.9 mOhms | 12.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 7.6 nC | 18 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 45 W | 45 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Series | SQ | SQ | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 6 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns | 5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | 21 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Unit Weight | - | 0.017870 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJA64EP-T1_GE3 | MOSFET N-Ch 60V Vds AEC-Q101 Qualified | |
| SQJA60EP-T1_GE3 | MOSFET 60V Vds PowerPAK AEC-Q101 Qualified | ||
| SQJA68EP-T1_GE3 | MOSFET 100V Vds +/-20V Vgs AEC-Q101 Qualified | ||
Vishay |
SQJA62EP-T1_GE3 | MOSFET N-CH 60V 60A POWERPAKSO-8 |