 |  |  | |
| PartNumber | SQJB40EP-T1_GE3 | SQJB40EP | SQJB42EP-T1_GE3 |
| Description | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | MOSFET 2 N-CH 40V POWERPAK SO8 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 6.3 mOhms, 6.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 35 nC, 35 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 34 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 48 S, 48 S | - | - |
| Fall Time | 15 ns, 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns, 20 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns, 18 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 7 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJB40EP-T1_GE3 | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | |
| SQJB40EP | 全新原裝 | ||
Vishay |
SQJB40EP-T1_GE3 | MOSFET 2 N-CH 40V POWERPAK SO8 | |
| SQJB42EP-T1_GE3 | MOSFET 2 N-CH 40V POWERPAK SO8 |