 |  | | |
| PartNumber | SQJQ402E-T1_GE3 | SQJQ100E-T1_GE3 | SQJQ100EL-T1_GE3 |
| Description | MOSFET N-Channel 40V AEC-Q101 Qualified | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-8x8L-4 | PowerPAK-8x8L-4 | PowerPAK-8x8L-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 200 A | 160 A | 160 A |
| Rds On Drain Source Resistance | 1.3 mOhms | 900 uOhms | 900 uOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 260 nC | 220 nC | 220 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 136 W | 136 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 140 S | 122 S | 122 S |
| Fall Time | 11 ns | 30 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 60 ns | 60 ns |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 69 ns | 60 ns | 60 ns |
| Typical Turn On Delay Time | 19 ns | 24 ns | 24 ns |
| Height | - | - | 1.9 mm |
| Length | - | - | 7.9 mm |
| Width | - | - | 6.22 mm |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJQ404E-T1_GE3 | MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L | |
| SQJQ906EL-T1_GE3 | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | ||
| SQJQ960EL-T1_GE3 | MOSFET 60V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ910EL-T1_GE3 | MOSFET 100V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ980EL-T1_GE3 | MOSFET 80V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ466E-T1_GE3 | MOSFET 60V Vds PowerPAK AEC-Q101 Qualified | ||
| SQJQ904E-T1_GE3 | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | ||
| SQJQ906E-T1_GE3 | MOSFET 40V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ410EL-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | ||
| SQJQ402E-T1_GE3 | MOSFET N-Channel 40V AEC-Q101 Qualified | ||
| SQJQ480E-T1_GE3 | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | ||
| SQJQ900E-T1_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| SQJQ100E-T1_GE3 | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | ||
| SQJQ100EL-T1_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| SQJQ402E-T1_GE3-CUT TAPE | 全新原裝 | ||
| SQJQ100EL | 全新原裝 | ||
| SQJQ402E-T1-GE3 | N-CHANNEL 40-V (D-S) 175C MOSF | ||
| SQJQ402ET1GE3 | 全新原裝 | ||
| SQJQ466E | 全新原裝 | ||
| SQJQ480E | 全新原裝 | ||
| SQJQ480E-T1-GE3 | MOSFET N-CHANNEL 80-V (D-S) 175C MOSF | ||
Vishay |
SQJQ906E-T1_GE3 | MOSFET 2 N-CH 40V POWERPAK8X8 | |
| SQJQ402E-T1_GE3 | MOSFET N-CH 40V 200A POWERPAK8 | ||
| SQJQ480E-T1_GE3 | MOSFET N-CHAN 80V POWERPAK 8X8L | ||
| SQJQ100E-T1_GE3 | MOSFET N-CH 40V 200A POWERPAK8 | ||
| SQJQ100EL-T1_GE3 | MOSFET N-CH 40V 200A POWERPAK8 | ||
| SQJQ410EL-T1_GE3 | MOSFET N-CH 40V 200A POWERPAK8 | ||
| SQJQ900E-T1_GE3 | MOSFET 2 N-CH 40V POWERPAK8X8 | ||
| SQJQ980EL-T1_GE3 | MOSFET 2 N-CH 80V POWERPAK8X8 |