SSH70

SSH70N10A vs SSH70N08 vs SSH70N10

 
PartNumberSSH70N10ASSH70N08SSH70N10
DescriptionMOSFET NCh/100V/70a/.023Ohm
ManufacturerON Semiconductor-FAI
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3-TO-3P-3, SC-65-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance23 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
PackagingTube-Tube
Height20.1 mm--
Length16.2 mm--
SeriesSSH70N10A--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min53.51 S--
Fall Time84 ns--
Product TypeMOSFET--
Rise Time24 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time112 ns--
Typical Turn On Delay Time22 ns--
Part # AliasesSSH70N10A_NL--
Unit Weight0.225789 oz--
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--100V
Current Continuous Drain (Id) @ 25°C--70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--4V @ 250A
Gate Charge (Qg) (Max) @ Vgs--195nC @ 10V
Vgs (Max)---
Input Capacitance (Ciss) (Max) @ Vds--4870pF @ 25V
FET Feature---
Power Dissipation (Max)--300W (Tc)
Rds On (Max) @ Id, Vgs--23 mOhm @ 35A, 10V
Operating Temperature---55°C ~ 175°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-3P
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SSH70N10A MOSFET NCh/100V/70a/.023Ohm
SSH70N08 全新原裝
SSH70N10A FQA70N10 全新原裝
SSH70N10 全新原裝
ON Semiconductor
ON Semiconductor
SSH70N10A MOSFET N-CH 100V 70A TO-3
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