| PartNumber | SSM6N357R,LF | SSM6N35AFE,LF | SSM6N35AFU,LF |
| Description | MOSFET LowON Res MOSFET ID=.65A VDSS=60V | MOSFET LowON Res MOSFET ID=.25A VDSS=20V | MOSFET LowON Res MOSFET ID=.25A VDSS=20V |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6F | SOT-563-6 | SOT-363-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 20 V | 20 V |
| Id Continuous Drain Current | 650 mA | 250 mA | 250 mA |
| Rds On Drain Source Resistance | 1.8 Ohms | 750 mOhms | 750 mOhms, 750 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 350 mV | 350 mV |
| Vgs Gate Source Voltage | 12 V | 10 V | 10 V |
| Qg Gate Charge | 1.5 nC | 340 pC | 340 pC, 340 pC |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1 W | 250 mW | 285 mW |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | SSM6N357R | SSM6N35AFE | SSM6N35AFU |
| Brand | Toshiba | Toshiba | Toshiba |
| Forward Transconductance Min | 500 mS | 0.5 S | 0.5 S, 0.5 S |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 4000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 3000 ns | 6.5 ns | 6.5 ns, 6.5 ns |
| Typical Turn On Delay Time | 990 ns | 2 ns | 2 ns, 2 ns |
| Unit Weight | 0.000564 oz | 0.000106 oz | 0.000212 oz |
| Minimum Operating Temperature | - | - | - |
| Transistor Type | - | 2 N-Channel | 2 N-Channel |
| Fall Time | - | 5.5 ns | 5.5 ns, 5.5 ns |
| Rise Time | - | 2 ns | 2 ns, 2 ns |