STB20NM50F

STB20NM50FDT4 vs STB20NM50FD vs STB20NM50FD B20NM50FD

 
PartNumberSTB20NM50FDT4STB20NM50FDSTB20NM50FD B20NM50FD
DescriptionMOSFET N-Ch 500 Volt 20 Amp
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance250 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation192 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameFDmesh--
PackagingReel--
Height4.6 mm--
Length10.4 mm--
SeriesSTB20NM50FD--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.35 mm--
BrandSTMicroelectronics--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn On Delay Time22 ns--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STB20NM50FDT4 MOSFET N-Ch 500 Volt 20 Amp
STB20NM50FDT4 IGBT Transistors MOSFET N-Ch 500 Volt 20 Amp
STB20NM50FD 全新原裝
STB20NM50FD B20NM50FD 全新原裝
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