 | | |
| PartNumber | STB3NK60ZT4 | STB3N62K3 |
| Description | MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH | MOSFET N-channel 620V, 2.7A Power MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 620 V |
| Id Continuous Drain Current | 2.4 A | 2.7 A |
| Rds On Drain Source Resistance | 3.6 Ohms | 2.5 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 45 W | 45 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | SuperMESH | - |
| Packaging | Reel | Reel |
| Height | 2.4 mm | 4.6 mm |
| Length | 6.6 mm | 10.4 mm |
| Series | STB3NK60ZT4 | STB3N62K3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - |
| Width | 6.2 mm | 9.35 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Forward Transconductance Min | 1.8 S | - |
| Fall Time | 14 ns | 15.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 14 ns | 6.8 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 22 ns |
| Typical Turn On Delay Time | 9 ns | 9 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STB3NK60ZT4 | MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH | |
| STB3N62K3 | MOSFET N-channel 620V, 2.7A Power MOSFET | ||
| STB3N62K3 | IGBT Transistors MOSFET N-channel 620V, 2.7A Power MOSFET | ||
| STB3NK60ZT4 | MOSFET N-CH 600V 2.4A D2PAK | ||
| STB3N60 | 全新原裝 | ||
| STB3NA80 | 全新原裝 | ||
| STB3NB60 | 全新原裝 | ||
| STB3NB60T4 | 全新原裝 | ||
| STB3NC60 | 全新原裝 | ||
| STB3NC60T4 | 全新原裝 | ||
| STB3NK60Z | 全新原裝 |