 |  |  | |
| PartNumber | STB95N3LLH6 | STB95N4F3 | STB9506 |
| Description | MOSFET N-channel 30 V 80 A DPAK | Darlington Transistors MOSFET N-Ch 40V 5.0mOhm 80A STripFET III | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 3.7 mOhms | - | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Series | STB95N3LLH6 | N-channel STripFET | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.079014 oz | 0.139332 oz | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 110 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 50 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 80 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Rds On Drain Source Resistance | - | 5.8 mOhms | - |
| Typical Turn Off Delay Time | - | 40 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |
| Qg Gate Charge | - | 40 nC | - |
| Channel Mode | - | Enhancement | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STB95N3LLH6 | MOSFET N-channel 30 V 80 A DPAK | |
| STB95N4F3 | Darlington Transistors MOSFET N-Ch 40V 5.0mOhm 80A STripFET III | ||
| STB95N3LLH6 | MOSFET N-CH 30V 80A D2PAK | ||
| STB9506 | 全新原裝 |