 | | | |
| PartNumber | STD11N60DM2 | STD11N50M2 | STD110NH02LT4 |
| Description | MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package | MOSFET N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package | MOSFET N-Ch 24 Volt 80 Amp |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | 24 V |
| Id Continuous Drain Current | 10 A | 8 A | 80 A |
| Rds On Drain Source Resistance | 370 mOhms | 450 mOhms | 5 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | 20 V |
| Qg Gate Charge | 16.5 nC | 12 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 110 W | 85 W | 125 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Reel | Reel | Reel |
| Series | STD11N60DM2 | STD11N50M2 | STD110NH02L |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 9.5 ns | 28.5 ns | 40 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.3 ns | 9 ns | 224 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 8 ns | 69 ns |
| Typical Turn On Delay Time | 11.7 ns | 11 ns | 14 ns |
| Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
| Height | - | - | 2.4 mm |
| Length | - | - | 6.6 mm |
| Type | - | - | MOSFET |
| Width | - | - | 6.2 mm |
| Forward Transconductance Min | - | - | 52 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD11N60DM2 | MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package | |
| STD120N4F6 | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | ||
| STD11N65M2 | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package | ||
| STD11N65M5 | MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS | ||
| STD11NM60ND | MOSFET N-channel 600V, 10A FDMesh II | ||
| STD11NM65N | MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II | ||
| STD11NM50N | MOSFET POWER MOSFET N-CH 500V | ||
| STD11N50M2 | MOSFET N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package | ||
| STD120N4LF6 | MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep | ||
| STD11N60M2-EP | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package | ||
| STD11NM50N | MOSFET N-CH 500V 9A DPAK | ||
| STD11N50M2 | IGBT Transistors MOSFET POWER MOSFET | ||
| STD11NM65N | RF Bipolar Transistors MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II | ||
| STD11N60DM2 | N-CHANNEL 600 V, 0.26 OHM TYP., | ||
| STD11N60M2-EP | N-CHANNEL 600 V, 0.550 OHM TYP., | ||
| STD110NH02LT4 | MOSFET N-CH 24V 80A DPAK | ||
| STD11N65M2 | MOSFET N-CH 650V 7A DPAK | ||
| STD11N65M5 | MOSFET N CH 650V 9A DPAK | ||
| STD11NM60N | MOSFET N-CH 600V 10A DPAK | ||
| STD11NM60N-1 | MOSFET N-CH 600V 10A I-PAK | ||
| STD11NM60ND | MOSFET N-CH 600V 10A DPAK | ||
| STD120N4F6 | MOSFET N-CH 40V 80A DPAK | ||
| STD120N4LF6 | MOSFET N-CH 40V 80A DPAK | ||
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| STD120N4LF6-CUT TAPE | 全新原裝 | ||
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| STD123-AT | 全新原裝 | ||
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| STD123AS | 全新原裝 | ||
| STD123AS 12A | 全新原裝 | ||
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| STD123S , MA188- | 全新原裝 | ||
| STD123S PF | 全新原裝 | ||
| STD123SF | 全新原裝 | ||
| STD123SG | 全新原裝 | ||
| STD123SJ | 全新原裝 | ||
| STD123UF | 全新原裝 |