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| PartNumber | STD12N50DM2 | STD12N50M2 |
| Description | MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 11 A | 10 A |
| Rds On Drain Source Resistance | 350 mOhms | 325 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V |
| Vgs Gate Source Voltage | 25 V | 30 V |
| Qg Gate Charge | 120 nC | 15 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 85 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | MDmesh | MDmesh |
| Packaging | Reel | Reel |
| Series | STD12N50DM2 | STD12N50M2 |
| Transistor Type | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Forward Transconductance Min | - | - |
| Development Kit | - | - |
| Fall Time | 9.8 ns | 34.5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | 10.5 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | 8 ns |
| Typical Turn On Delay Time | 12.5 ns | 13.5 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD12N50DM2 | MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | |
| STD12N50M2 | MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12N50DM2 | N-CHANNEL 500 V, 0.35 OHM TYP., | ||
| STD12N50M2 | MOSFET N-CH 500V 10A DPAK | ||
| STD12N50M2 12N50M2 | 全新原裝 |