| PartNumber | STD14NM50N | STD140N6F7 | STD14NM50NAG |
| Description | MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II | MOSFET N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in a DPAK package | MOSFET Automotive-grade N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 60 V | 500 V |
| Id Continuous Drain Current | 12 A | 80 A | 12 A |
| Rds On Drain Source Resistance | 900 mOhms | 3.1 mOhms | 280 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 2 V | 20 V | 25 V |
| Qg Gate Charge | 42 nC | 55 nC | 27 nC |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 90 W | 134 W | 90 W |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Tradename | MDmesh | STripFET | MDmesh |
| Packaging | Reel | Reel | - |
| Series | STD14NM50N | STD140N6F7 | STD14NM50NAG |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MDmesh II Power MOSFET | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 32 ns | 20 ns | 22 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 68 ns | 16 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 39 ns | 42 ns |
| Typical Turn On Delay Time | 15 ns | 24 ns | 12 ns |
| Unit Weight | 0.139332 oz | 0.011993 oz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Channel Mode | - | Enhancement | - |