STD5N60

STD5N60M2 vs STD5N60 vs STD5N60DM2

 
PartNumberSTD5N60M2STD5N60STD5N60DM2
DescriptionMOSFET N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK packageN-CHANNEL 600 V, 0.26 OHM TYP.,
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance1.4 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge8.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingReel--
SeriesSTD5N60M2--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time11.8 ns--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STD5N60M2 MOSFET N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
STD5N60DM2 N-CHANNEL 600 V, 0.26 OHM TYP.,
STD5N60M2 MOSFET N-CH 600V 3.7A DPAK
STD5N60M2-CUT TAPE 全新原裝
STD5N60 全新原裝
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