STD70N1

STD70N10F4 vs STD70N10F4T4 vs STD70N10F4 70N10F4

 
PartNumberSTD70N10F4STD70N10F4T4STD70N10F4 70N10F4
DescriptionMOSFET N-Ch, 100V-0.015ohms 60A
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance19.5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge85 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSTripFET--
PackagingReel--
Height2.4 mm--
Length6.6 mm--
SeriesSTD70N10F4--
Transistor Type1 N-Channel Power MOSFET--
TypePower MOSFETs--
Width6.2 mm--
BrandSTMicroelectronics--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STD70N10F4 MOSFET N-Ch, 100V-0.015ohms 60A
STD70N10F4 MOSFET N-CH 100V 60A DPAK
STD70N10F4T4 全新原裝
STD70N10F4 70N10F4 全新原裝
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