 | | | |
| PartNumber | STE60N105DK5 | STE53NC50 | STE70NM50 |
| Description | Discrete Semiconductor Modules N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package | MOSFET N-Ch 500 Volt 53 Amp | MOSFET N-Ch 500 Volt 70 Amp Power MDmesh |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | - | - |
| Type | High Voltage | MOSFET | MOSFET |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Mounting Style | Screw Mount | SMD/SMT | SMD/SMT |
| Package / Case | ISOTOP-4 | ISOTOP-4 | ISOTOP-4 |
| Minimum Operating Temperature | - 55 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | STE60N105DK5 | STE53NC50 | STE70NM50 |
| Configuration | Single | Single | Single |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 49.5 ns | 38 ns | 46 ns |
| Id Continuous Drain Current | 46 A | 53 A | 70 A |
| Operating Supply Voltage | 840 V | - | - |
| Pd Power Dissipation | 680 W | 460 W | 600 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 110 mOhms | 80 mOhms | 50 mOhms |
| Rise Time | 64.5 ns | 70 ns | 58 ns |
| Factory Pack Quantity | 100 | 100 | 10 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | MDmesh | PowerMESH | - |
| Typical Turn Off Delay Time | 262 ns | - | - |
| Typical Turn On Delay Time | 40.6 ns | 46 ns | 51 ns |
| Vds Drain Source Breakdown Voltage | 1050 V | 500 V | 500 V |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Channel Mode | - | Enhancement | Enhancement |
| Packaging | - | Tube | Tube |
| Height | - | 9.1 mm | 9.1 mm |
| Length | - | 38.2 mm | 38.2 mm |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 25.5 mm | 25.5 mm |
| Forward Transconductance Min | - | 42 S | 35 S |
| Unit Weight | - | 1 oz | 1 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STE60N105DK5 | Discrete Semiconductor Modules N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package | |
| STE70NM60 | MOSFET N-Ch 600 Volt 70 Amp | ||
| STE88N65M5 | MOSFET N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package | ||
| STE70NM50 | MOSFET N-Ch 500 Volt 70 Amp Power MDmesh | ||
| STE88N65M5 | IGBT Transistors MOSFET POWER MOSFET | ||
| STE70NM60 | MOSFET N-Ch 600 Volt 70 Amp | ||
| STE53NC50 | MOSFET N-CH 500V 53A ISOTOP | ||
| STE60N105DK5 | ISOTOP PARALL. | ||
| STE70NM50 | MOSFET N-CH 500V 70A ISOTOP | ||
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Vishay |
STE6000-16T4MI | Tantalum Capacitors - Wet 16volts 6000uF 20% T4 case size | |
| STE750-75T4KI | Tantalum Capacitors - Wet 75volts 750uF 10% T4 case size | ||
| STE750-75T4MI | Tantalum Capacitors - Wet 75volts 750uF 20% T4 case size |