 | | |
| PartNumber | STE53NC50 | STE50DE100 |
| Description | MOSFET N-Ch 500 Volt 53 Amp | Bipolar Transistors - BJT POWER MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | - |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | ISOTOP-4 | ISOTOP |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | NPN |
| Vds Drain Source Breakdown Voltage | 500 V | - |
| Id Continuous Drain Current | 53 A | - |
| Rds On Drain Source Resistance | 80 mOhms | - |
| Vgs Gate Source Voltage | 30 V | - |
| Minimum Operating Temperature | - 65 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 460 W | 160 W |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | PowerMESH | - |
| Packaging | Tube | Tube |
| Height | 9.1 mm | - |
| Length | 38.2 mm | - |
| Series | STE53NC50 | STE50DE100 |
| Transistor Type | 1 N-Channel | - |
| Type | MOSFET | - |
| Width | 25.5 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Forward Transconductance Min | 42 S | - |
| Fall Time | 38 ns | - |
| Product Type | MOSFET | BJTs - Bipolar Transistors |
| Rise Time | 70 ns | - |
| Factory Pack Quantity | 100 | 10 |
| Subcategory | MOSFETs | Transistors |
| Typical Turn On Delay Time | 46 ns | - |
| Unit Weight | 1 oz | - |
| DC Current Gain hFE Max | - | 13 |
| DC Collector/Base Gain hfe Min | - | 3 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STE53NC50 | MOSFET N-Ch 500 Volt 53 Amp | |
| STE50DE100 | Bipolar Transistors - BJT POWER MOSFET | ||
| STE50DE100 | TRANS NPN 1000V 50A ISOTOP | ||
| STE53NC50 | MOSFET N-CH 500V 53A ISOTOP | ||
| STE50N40 | 全新原裝 | ||
| STE53N50 | 全新原裝 | ||
| STE53N50E | 全新原裝 | ||
| STE53NA50 | 全新原裝 | ||
| STE5588CVB | 全新原裝 | ||
| STE5588SVB | 全新原裝 | ||
| STE5589ALC | 全新原裝 | ||
| STE5589CLS | 全新原裝 | ||
| STE5589ELB | 全新原裝 |