STFI10N stock, STFI10N, STFI10NK60Z


PartNumber	STFI10NK60Z	STFI10N62K3	STFI10N65K3
Description	MOSFET N-Ch 600V 0.65 Ohm 10A SuperMESH	RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3	MOSFET N-CH 650V 10A I2PAKFP
Manufacturer	STMicroelectronics	STMicroelectronics	-
Product Category	MOSFET	Transistors - FETs, MOSFETs - Single	-
RoHS	Y	-	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-281-3	-	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	600 V	-	-
Id Continuous Drain Current	10 A	-	-
Rds On Drain Source Resistance	750 mOhms	-	-
Vgs Gate Source Voltage	30 V	-	-
Qg Gate Charge	50 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	35 W	-	-
Configuration	Single	Single	-
Packaging	Tube	Tube	-
Series	STFI10NK60Z	N-channel MDmesh	-
Transistor Type	1 N-Channel	1 N-Channel	-
Brand	STMicroelectronics	-	-
Product Type	MOSFET	-	-
Factory Pack Quantity	1500	-	-
Subcategory	MOSFETs	-	-
Unit Weight	0.079014 oz	-	-
Package Case	-	I2PAKFP-3	-
Pd Power Dissipation	-	30 W	-
Fall Time	-	31 ns	-
Rise Time	-	15 ns	-
Vgs Gate Source Voltage	-	30 V	-
Id Continuous Drain Current	-	8.4 A	-
Vds Drain Source Breakdown Voltage	-	620 V	-
Vgs th Gate Source Threshold Voltage	-	3.75 V	-
Rds On Drain Source Resistance	-	680 mOhms	-
Typical Turn Off Delay Time	-	41 ns	-
Typical Turn On Delay Time	-	14.5 ns	-
Qg Gate Charge	-	42 nC	-
Channel Mode	-	Enhancement	-

Search Part Number : "STFI10N", Match & Start with "STFI10N" - Total : 5

製造商	型號	描述
STMicroelectronics	STFI10NK60Z	MOSFET N-Ch 600V 0.65 Ohm 10A SuperMESH
	STFI10N62K3	RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3
	STFI10N65K3	MOSFET N-CH 650V 10A I2PAKFP
	STFI10NK60Z	MOSFET N-CH 600V 10A I2PAK FP
	STFI10N60M2	全新原裝

STFI10N